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APTM50AM38STG 数据表(PDF) 1 Page - Microsemi Corporation

部件名 APTM50AM38STG
功能描述  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50AM38STG 数据表(HTML) 1 Page - Microsemi Corporation

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APTM50AM38STG
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NT C2
OUT
VBUS
NT C1
0/VBUS
Q1
G1
Q2
S1
S2
G2
NTC2
S1
OUT
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
90
ID
Continuous Drain Current
Tc = 80°C
67
IDM
Pulsed Drain current
360
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
45
m
PD
Maximum Power Dissipation
Tc = 25°C
694
W
IAR
Avalanche current (repetitive and non repetitive)
46
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 500V
RDSon = 38mΩ typ @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Phase leg
Series & parallel diodes
MOSFET Power Module


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