APTM120U10SCAVG

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3 – 8

Series diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

200

V

350

Maximum Reverse Leakage Current

600

µA

DC Forward Current

120

A

1.1

1.15

1.4

Diode Forward Voltage

0.9

V

31

Reverse Recovery Time

60

ns

120

Reverse Recovery Charge

di/dt = 400A/µs

500

nC

SiC Parallel diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

1200

V

288

1800

Maximum Reverse Leakage Current

504

9000

µA

DC Forward Current

Tc = 100°C

90

A

1.6

1.8

Diode Forward Voltage

2.3

3

V

Total Capacitive Charge

di/dt =1800A/µs

360

nC

864

C

Total Capacitance

621

pF

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

Transistor

0.038

Series diode

0.46

Junction to Case Thermal Resistance

SiC Parallel diode

0.22

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

4000

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

To heatsink

M6

3

5

M5

2

3.5

Torque Mounting torque

For terminals

M3

1

1.5

N.m

Wt

Package Weight

280

g