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APTM120U10SCAVG 数据表(PDF) 8 Page - Microsemi Corporation |
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APTM120U10SCAVG 数据表(HTML) 8 Page - Microsemi Corporation |
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8 / 8 page ![]() APTM120U10SCAVG www.microsemi.com 8 – 8 SiC Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.04 0.08 0.12 0.16 0.2 0.24 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 40 80 120 160 00.5 1 1.5 22.533.5 VF Forward Voltage (V) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 150 300 450 600 750 900 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 0 900 1800 2700 3600 4500 5400 6300 1 10 100 1000 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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