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APTM120U10SCAVG 数据表(PDF) 7 Page - Microsemi Corporation

部件名 APTM120U10SCAVG
功能描述  Single switch Series & SiC parallel diodes MOSFET Power Module
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM120U10SCAVG 数据表(HTML) 7 Page - Microsemi Corporation

  APTM120U10SCAVG Datasheet HTML 1Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 2Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 3Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 4Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 5Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 6Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 7Page - Microsemi Corporation APTM120U10SCAVG Datasheet HTML 8Page - Microsemi Corporation  
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APTM120U10SCAVG
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Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
3
6
9
12
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
4
8
12
16
20
24
02
4
6
8
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=116A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
50
70
90
110
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage



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