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SSM4800AGM 数据表(PDF) 2 Page - Silicon Standard Corp.

部件名 SSM4800AGM
功能描述  N-Channel Enhancement Mode Power Mosfet
PDF  5 Pages
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制造商  SSC [Silicon Standard Corp.]
网页  http://www.siliconstandard.com
标志 SSC - Silicon Standard Corp.

SSM4800AGM 数据表(HTML) 2 Page - Silicon Standard Corp.

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SSM4800AGM
ELECTRICAL CHARACTERISTICS
02/09/2007 Rev.1.00
www.SiliconStandard.com
2
@TJ = 25
oC ( unless otherwise specified )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
14
18
mΩ
VGS=4.5V, ID=7A
-
18
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
16
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=9A
-
7
12
nC
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=15Ω
-8
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.9A, VGS=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
IS=9A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125oC/W when mounted on Min. copper pad.
SOURCE-DRAIN DIODE



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