SSM4800AGM datasheet(3/5 Pages) SSC

部件名	SSM4800AGM

功能描述	N-Channel Enhancement Mode Power Mosfet

PDF	5 Pages

Scroll/Zoom	100%

制造商	SSC [Silicon Standard Corp.]

网页	http://www.siliconstandard.com

标志

3 / 5 page

02/09/2007 Rev.1.00

www.SiliconStandard.com

SSM4800AGM

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

V DS , Drain-to-Source Voltage (V)

V G = 3.0 V

10V

7.0 V

5.0 V

4.5 V

T A =25

o C

0246

V DS , Drain-to-Source Voltage (V)

T A = 150

o C

10V

7.0 V

5.0 V

4.5 V

V G = 3.0 V

V GS , Gate-to-Source Voltage (V)

I D =7 A

T A =25 ℃

0.6

1.0

1.4

1.8

-50

100

150

T j , Junction Temperature (

o C)

I D =9 A

V G =10V

0.6

0.8

1.0

1.2

1.4

-50

100

150

T j , Junction Temperature (

o C)

0.2

0.4

0.6

0.8

1.2

V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

SSM4800AGM 数据表(PDF) 3 Page - Silicon Standard Corp.

SSM4800AGM 数据表(HTML) 3 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5

数据表下载