N-Channel Enhancement Mode

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

RoHS Compliant

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

02/09/2007 Rev.1.00

www.SiliconStandard.com

1

SSM4800AGM

Power Mosfet

Pb-free; RoHS-compliant

S

S

S

G

D

D

D

D

SO-8

G

D

S

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

℃/W

Parameter

Total Power Dissipation

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

0.02

Storage Temperature Range

Continuous Drain Current

3

7.5

Pulsed Drain Current

1

40

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Rating

30

±25

9.4

ABSOLUTE MAXIMUM RATINGS

30V

18mΩ

9.4A

THERMAL DATA