数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

SSM9510GM 数据表(PDF) 2 Page - Silicon Standard Corp.

部件名 SSM9510GM
功能描述  N- and P-channel Enhancement-mode Power MOSFETs
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SSC [Silicon Standard Corp.]
网页  http://www.siliconstandard.com
标志 SSC - Silicon Standard Corp.

SSM9510GM 数据表(HTML) 2 Page - Silicon Standard Corp.

  SSM9510GM Datasheet HTML 1Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 2Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 3Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 4Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 5Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 6Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 7Page - Silicon Standard Corp. SSM9510GM Datasheet HTML 8Page - Silicon Standard Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
www.SiliconStandard.com
2 of 8
SSM9510GM
2/10/2005 Rev.2.01
N-channel Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.02
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
-
28
m
Ω
VGS=4.5V, ID=3A
-
-
40
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
nA
Qg
Total Gate Charge
2
ID=6.9A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
540
870
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=6.9A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
±100



Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com