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N- and P-channel Enhancement-mode Power MOSFETs

Simple drive requirement

Lower gate charge

Fast switching characteristics

DESCRIPTION

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

The SSM9510GM is in the SO-8 package, which is widely preferred for

commercial and industrial surface mount applications. It is well suited

for low voltage applications requiring complementary N and P MOSFETs.

30V

28m

Ω

6.9A

P-CH

-30V

55m

Ω

-5.3A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

±20

±20

V

Continuous Drain Current

3

6.9

-5.3

A

Continuous Drain Current

3

5.5

-4.2

A

Pulsed Drain Current

1

30

-30

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Parameter

THERMAL DATA

S1

G1

S2

G2

D1

D1

D2

G2

D2

S2

G1

D1

S1

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

Pb-free; RoHS compliant.

SSM9510GM

2/10/2005 Rev.2.01