SSM9510GM datasheet(3/8 Pages) SSC

3 / 8 page

www.SiliconStandard.com

3 of 8

SSM9510GM

2/10/2005 Rev.2.01

P-channel Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.023

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-5A

Ω

VGS=-4.5V, ID=-3A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-5A

4.9

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-5.3A

Qgs

Gate-Source Charge

VDS=-24V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=3.3Ω ,VGS=-10V

Fall Time

RD=10Ω

-13

Ciss

Input Capacitance

VGS=0V

580

930

Coss

Output Capacitance

VDS=-25V

180

Crss

Reverse Transfer Capacitance

f=1.0MHz

120

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VSD

Forward On Voltage

IS=-1.7A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-5.3A, VGS=0V

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

Notes:

1.Pulse width limited by maximum junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board; 135°C/W when mounted on minimum copper pad.

± 20V

±100

SSM9510GM 数据表(PDF) 3 Page - Silicon Standard Corp.

SSM9510GM 数据表(HTML) 3 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5 6 7 8

数据表下载