2PD601ART_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 15 March 2007

2 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

2PD601ART

-

plastic surface-mounted package; 3 leads

SOT23

Table 4.

Marking codes

Type number

Marking code[1]

2PD601ART

C3*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

6

V

collector current

-

100

mA

peak collector current

single pulse;

-

200

mA

peak base current

single pulse;

-

100

mA

total power dissipation

[1] -

250

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C