2PD601ART datasheet(5/10 Pages) NXP

5 / 10 page

2PD601ART_1

Product data sheet

Rev. 01 — 15 March 2007

5 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

VCE =10V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 3.

DC current gain as a function of collector

current; typical values

Fig 4.

Collector current as a function of

collector-emitter voltage; typical values

IC/IB =10

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 5.

Base-emitter saturation voltage as a function of

collector current; typical values

Fig 6.

Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

10−1

102

006aaa992

200

300

100

400

500

hFE

(1)

(2)

(3)

VCE (V)

010

006aaa993

0.04

0.06

0.02

0.08

0.1

(A)

IB (mA) = 0.56

0.50

0.44

0.38

0.32

0.26

0.20

0.14

0.08

0.02

006aaa994

0.5

0.9

1.3

VBEsat

(V)

0.1

IC (mA)

10−1

102

(1)

(2)

(3)

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IC (mA)

10−1

102

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

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