2PD601ART datasheet(4/10 Pages) NXP

4 / 10 page

2PD601ART_1

Product data sheet

Rev. 01 — 15 March 2007

4 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration for

SOT23 (TO-236AB); typical values

006aaa991

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

102

103

Zth(j-a)

(K/W)

0.75

0.50

0.33

0.20

0.01

0.10

0.05

0.02

δ = 1

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =60V; IE = 0 A

--10

VCB =60V; IE =0A;

Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

--10

hFE

DC current gain

VCE =2V;

IC = 100 mA

VCE =10V;

IC =2mA

210

340

VCEsat

collector-emitter

saturation voltage

IC = 100 mA;

IB =10mA

[1] -

250

transition frequency

VCE =10V;

IC = 2 mA;

f = 100 MHz

100

MHz

collector capacitance

VCB =10V;

IE =ie =0A;

f=1MHz

--3

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