BAS516 datasheet(6/20 Pages) NXP

6 / 20 page

BAS16_SER_5

Product data sheet

Rev. 05 — 25 August 2008

6 of 20

NXP Semiconductors

BAS16 series

High-speed switching diodes

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB with 60

µm copper strip line.

[3]

Reﬂow soldering is the only recommended soldering method.

[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[5]

Single diode loaded.

[6]

Soldering point of cathode tab.

[7]

Soldering points at pins 4, 5 and 6.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

[2]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

[3]

When switched from IF = 10 mA; tr =20ns.

Rth(j-sp)

thermal resistance from

junction to solder point

BAS16H

[6] --70

K/W

BAS16J

[6] --55

K/W

BAS16T

350

K/W

BAS16VY

[5][7] -

260

K/W

BAS316

[6] -

150

K/W

BAS516

[6] -

120

K/W

Table 7.

Thermal characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

[1]

IF = 1 mA

715

IF = 10 mA

855

IF = 50 mA

--1

IF = 150 mA

1.25

reverse current

VR = 25 V

--30

VR = 80 V

0.5

µA

VR = 25 V; Tj = 150 °C

--30

µA

VR = 80 V; Tj = 150 °C

--50

µA

diode capacitance

f = 1 MHz; VR =0V

BAS16; BAS16H;

BAS16J; BAS16L;

BAS16T; BAS16VV;

BAS16VY; BAS16W;

BAS316

1.5

BAS516

trr

reverse recovery time

[2] --4

VFR

forward recovery voltage

[3] -

1.75

BAS516 数据表(PDF) 6 Page - NXP Semiconductors

BAS516 数据表(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

数据表下载