BAS516 datasheet(8/20 Pages) NXP

8 / 20 page

BAS16_SER_5

Product data sheet

Rev. 05 — 25 August 2008

8 of 20

NXP Semiconductors

BAS16 series

High-speed switching diodes

Test information

Package outline

(1) IR =1mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig 5.

Reverse recovery time test circuit and waveforms

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005

Fig 6.

Forward recovery voltage test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

10 %

90 %

input signal

RS = 50 Ω

Ri = 50 Ω

OSCILLOSCOPE

1 k

Ω

450

Ω

D.U.T.

mga882

VFR

output signal

Fig 7.

Package outline BAS16 (SOT23/TO-236AB)

Fig 8.

Package outline BAS16H (SOD123F)

04-11-04

Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

04-11-29

Dimensions in mm

1.2

1.0

0.25

0.10

3.6

3.4

2.7

2.5

0.55

0.35

0.70

0.55

1.7

1.5

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