BAS516 datasheet(7/20 Pages) NXP

7 / 20 page

BAS16_SER_5

Product data sheet

Rev. 05 — 25 August 2008

7 of 20

NXP Semiconductors

BAS16 series

High-speed switching diodes

(1) Tamb = 150 °C

(2) Tamb =85 °C

(3) Tamb =25 °C

(4) Tamb = −40 °C

Based on square wave currents.

Tj =25 °C; prior to surge

Fig 1.

Forward current as a function of forward

voltage; typical values

Fig 2.

Non-repetitive peak forward current as a

function of pulse duration; maximum values

(1) Tamb = 150 °C

(2) Tamb =85 °C

(3) Tamb =25 °C

(4) Tamb = −40 °C

f = 1 MHz; Tamb =25 °C

Fig 3.

Reverse current as a function of reverse

voltage; typical values

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

006aab132

102

103

(mA)

10−1

VF (V)

1.4

1.0

0.4

0.8

0.2

1.2

0.6

(1)

(2)

(3)

(4)

mbg704

102

IFSM

(A)

10−1

tp (µs)

1104

103

102

006aab133

102

(

µA)

VR (V)

100

10−1

10−2

10−3

10−4

10−5

(1)

(2)

(3)

(4)

0.8

0.6

0.4

0.2

mbg446

VR (V)

(pF)

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