GTL2002D datasheet(9/22 Pages) NXP

9 / 22 page

GTL2002_7

Product data sheet

Rev. 07 — 2 July 2009

9 of 22

NXP Semiconductors

GTL2002

2-bit bidirectional low voltage translator

11. Static characteristics

[1]

All typical values are measured at Tamb =25 °C.

[2]

Cio(on) maximum of 30 pF and Cio(off) maximum of 15 pF is guaranteed by design.

[3]

Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is

determined by the lowest voltage of the two (Sn or Dn) terminals.

Table 9.

Static characteristics

Tamb = −40 °C to +85 °C, unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

VOL

LOW-level output voltage

VDD = 3.0 V; VSREF = 1.365 V;

VSn or VDn = 0.175 V;

Iclamp = 15.2 mA

260

350

VIK

input clamping voltage

II = −18 mA; VGREF =0V

−1.2

ILI(gate)

gate input leakage current

VI =5V; VGREF = 0 V

--5

µA

Cig

input capacitance at gate

pin GREF; VI = 3 V or 0 V

19.4

Cio(off)

off-state input/output capacitance

VO = 3 V or 0 V; VGREF =0V

[2] -

7.4

Cio(on)

on-state input/output capacitance

VO = 3 V or 0 V; VGREF =3V

[2] -

18.6

Ron

ON-state resistance

VI =0V; IO =64mA

[3]

VGREF = 4.5 V

3.5

Ω

VGREF = 3 V

4.4

Ω

VGREF = 2.3 V

5.5

Ω

VGREF = 1.5 V

105

Ω

VI =0V; IO = 30 mA;

VGREF = 1.5 V

[3] -9

Ω

VI = 2.4 V; IO =15mA;

VGREF = 4.5 V

[3] -7

Ω

VI = 2.4 V; IO =15mA;

VGREF =3V

[3] -58

Ω

VI = 1.7 V; IO =15mA;

VGREF = 2.3 V

[3] -50

Ω

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