SC102205 datasheet(112/140 Pages) FREESCALE

112 / 140 page

Device User Guide — 9S12DT128DGV2/D V02.17

114

Freescale Semiconductor

Table A-12 NVM Reliability Characteristics1

NOTES:

1. TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive

application.

Conditions are shown in (Table A-4) unless otherwise noted

Num C

Rating

Symbol

Min

Typ

Max

Unit

Flash Reliability Characteristics

Data retention after 10,000 program/erase cycles at an

average junction temperature of TJavg ≤ 85°C

tFLRET

1002

2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated

to 25

°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please

refer to Engineering Bulletin EB618.

—

Years

Data retention with <100 program/erase cycles at an

average junction temperature TJavg ≤ 85°C

1002

—

Number of program/erase cycles

(–40

°C

≤ T

J ≤ 0°C)

nFL

10,000

—

Cycles

Number of program/erase cycles

°C

≤ T

J ≤ 140°C)

10,000

100,0003

3. Spec table quotes typical endurance evaluated at 25

°C for this product family, typical endurance at various temperature

can be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please

refer to Engineering Bulletin EB619.

—

EEPROM Reliability Characteristics

Data retention after up to 100,000 program/erase cycles

at an average junction temperature of TJavg ≤ 85°C

tEEPRET

1002

—

Years

Data retention with <100 program/erase cycles at an

average junction temperature TJavg ≤ 85°C

1002

—

Number of program/erase cycles

(–40

°C

≤ T

J ≤ 0°C)

nEEP

10,000

—

Cycles

Number of program/erase cycles

°C < T

J ≤ 140°C)

100,000

300,0003

—

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