MC9S08JS16 Series MCU Data Sheet, Rev. 4

Electrical Characteristics

Freescale Semiconductor

8

Eqn. 2

Solving Equation 1 and Equation 2 for K gives:

2

Eqn. 3

where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring

3.4

Electrostatic Discharge (ESD) Protection Characteristics

Although damage from static discharge is much less common on these devices than on early CMOS

circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification

tests are performed to ensure that these devices can withstand exposure to reasonable levels of static

without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is

considered to have failed if, after exposure to ESD pulses, the device no longer meets the device

specification requirements. Complete DC parametric and functional testing is performed per the applicable

device specification at room temperature followed by hot temperature, unless specified otherwise in the

device specification.

3.5

DC Characteristics

This section includes information about power supply requirements, I/O pin characteristics, and power

supply current in various operating modes.

Table 5. ESD Protection Characteristics

Parameter

Symbol

Value

Unit

ESD Target for Machine Model (MM) — MM circuit

description

200

V

ESD Target for Human Body Model (HBM) — HBM

circuit description

2000

V

Table 6. DC Characteristics

Num C

Parameter

Symbol

Min

Max

Unit

1

—

2.7

—

5.5

V