LTC4360ISC8-2TRMPBF datasheet(3/12 Pages) LINER

3 / 12 page

LTC4360-1/LTC4360-2

436012f

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: All currents into device pins are positive; all currents out of device

pins are negative. All voltages are referenced to GND unless otherwise

speciﬁed.

The

l denotes the speciﬁcations which apply over the full operating

temperature range, otherwise speciﬁcations are at TA = 25°C. VIN = 5V, VON = 0V (LTC4360-1) unless otherwise noted.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Supplies

VIN

Input Voltage Range

2.5

VIN(UVL)

Input Undervoltage Lockout

VIN Rising

1.8

2.1

2.45

IIN

Input Supply Current

LTC4360-1 VON = 0V, LTC4360-2

220

400

μA

LTC4360-1 VON = 2.5V

1.5

μA

Thresholds

VIN(OV)

IN Pin Overvoltage Threshold

VIN Rising

5.684

5.8

5.916

ΔVOV

Overvoltage Hysteresis

100

200

External Gate Drive

ΔVGATE

External N-Channel MOSFET Gate Drive

(VGATE – VOUT)

2.5V ≤ VIN < 3V, IGATE = –1μA

3V ≤ VIN < 5.5V, IGATE = –1μA

3.5

4.5

7.9

VGATE(TH)

GATE High Threshold for PWRGD Status VIN = 3.3V

VIN = 5V

5.7

6.7

6.3

7.2

6.8

7.8

IGATE(UP)

GATE Pull-Up Current

VGATE = 1V

–5

–10

–15

μA

VGATE(UP)

GATE Ramp-Up

VGATE = 1V to 7V

1.5

4.5

V/ms

IGATE(FST)

GATE Fast Pull-Down Current

Fast Turn-Off, VIN = 6V, VGATE = 9V

IGATE(DN)

GATE Pull-Down Current

VON = 2.5V, VGATE = 9V (LTC4360-1)

μA

Input Pins

IOUT(IN)

OUT Input Current

VOUT = 5V, VON = 0V

VOUT = 5V, VON = 2.5V

510

±3

μA

VON(TH)

ON Input Threshold

(LTC4360-1)

0.4

1.5

ION

ON Pull-Down Current

VON = 2.5V (LTC4360-1)

2.5

μA

Output Pins

VGATEP(CLP)

IN to GATEP Clamp Voltage

(LTC4360-2)

5.8

7.5

RGATEP

GATEP Resistive Pull-down

VGATEP = 3V (LTC4360-2)

0.8

3.2

MΩ

VPWRGD(OL)

PWRGD Output Low Voltage

VIN = 5V, IPWRGD = 3mA

0.23

0.4

RPWRGD

PWRGD Pull-Up Resistance to OUT

VIN = 6.5V, VPWRGD = 1V

250

500

800

kΩ

Delay

tON

GATE On Delay

VIN High to IGATE = –5μA

130

200

tOFF

GATE Off Propagation Delay

VIN = Step 5V to 6.5V

0.25

μs

tPWRGD

PWRGD Delay

VIN = Step 5V to 6.5V

VGATE > VGATE(TH) to PWRGD Low

0.25

100

μs

tON(OFF)

ON High to GATE Off

VON = Step 0V to 2.5V (LTC4360-1)

μs

Note 3: An internal clamp limits VGATE to a minimum of 4.5V above VOUT.

Driving this pin to voltages beyond this clamp may damage the device.

LTC4360ISC8-2TRMPBF 数据表(PDF) 3 Page - Linear Technology

LTC4360ISC8-2TRMPBF 数据表(HTML) 3 Page - Linear Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载