KB8821 datasheet(8/21 Pages) SAMSUNG

8 / 21 page

PRELIMINARY SPECIFICATION (V1.5)

FREQUENCY SYNTHESIZER

KB8821/22/23

99-06-15

ELECTRICAL CHARACTERISTICS(V

DD=3.0V, VP=3.0V, -40

οC≤T

a≤85

οC Unless otherwise specified)- Continued

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Charge Pump Outputs : CPoRF, CPoIF

Charge Pump Output Current

ICP-SRC

VCP=VP/2, ICPo=Low

-1.125

ICP-SINK

VCP=VP/2, ICPo=Low

+1.125

ICP-SRC

VCP=VP/2, ICPo=High

-4.5

ICP-SINK

VCP=VP/2, ICPo=High

+4.5

Charge Pump Leakage Current

ICPL

0.5V

≤ V

CP ≤ VP-0.5V

-2.5

+2.5

Output Current Sink vs. Source

Mismatch*

ICP-SINK

ICP-SRC

VCP=VP/2

Ta=25

Output Current Magnitude Variation

vs. Temperature**

ICP vs T

VCP=VP/2

Output Current Magnitude Variation

vs. Voltage***

ICP vs

VCP

0.5V

≤ V

CP ≤ VP-0.5V

Ta=25

Programmable Divider

Operating

Frequency

KB8823

finRF

VDD=2.7V to 4.0V

0.5

2.5

GHz

KB8822

0.2

2.0

KB8821

0.1

1.2

Operating Frequency

finIF

VDD=3.0V

520

MHz

RF Input Sensitivity

PfinRF

VDD=3.0V

-15

dBm

VDD=4.0V

-10

IF Input Sensitivity

PfinIF

VDD=2.7V to 4.0V

-10

dBm

Phase Detector Frequency

fPD

MHz

Reference Divider

Operating Frequency

OSCin

MHz

Input Sensitivity

VOSCin

0.5

VPP

KB8821 数据表(PDF) 8 Page - Samsung semiconductor

KB8821 数据表(HTML) 8 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

数据表下载

链接网址

KB8821 数据表(PDF) 8 Page - Samsung semiconductor

KB8821 数据表(HTML) 8 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

数据表 下载

链接网址

数据表下载