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LMZ10503EXT 数据表(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LMZ10503EXT
功能描述  3A SIMPLE SWITCHER짰 Power Module with 5.5V Maximum Input Voltage for Military and Rugged Applications
PDF  22 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LMZ10503EXT 数据表(HTML) 1 Page - National Semiconductor (TI)

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LMZ10503EXT
July 30, 2010
3A SIMPLE SWITCHER® Power Module with 5.5V Maximum
Input Voltage for Military and Rugged Applications
Easy to Use 7 Pin Package
301182a4
TO-PMOD 7 Pin Package
10.16 x 13.77 x 4.57 mm (0.4 x 0.39 x 0.18 in)
θ
JA = 20°C/W, θJC = 1.9°C/W (Note 1)
RoHS Compliant
Electrical Specifications
15W maximum total output power
Up to 3A output current
Input voltage range 2.95V to 5.5V
Output voltage range 0.8V to 5V
±1.63% feedback voltage accuracy over temperature
Efficiency up to 96%
Key Features
Integrated shielded inductor
Flexible startup sequencing using external soft-start,
tracking, and precision enable
Protection against in-rush currents and faults such as input
UVLO and output short-circuit
-55°C to +125°C junction temperature operating range
Single exposed pad and standard pinout for easy
mounting and manufacturing
Pin-to-pin compatible with
LMZ10504EXT (4A/20W max)
LMZ10505EXT (5A/25W max)
Fully enable for WEBENCH® and Power Designer
Low output voltage ripple of 10 mV allows for powering
noise-sensitive transceiver and signaling ICs
Fast transient response for powering FPGAs and ASICs
Applications
Point-of-load conversions from 3.3V and 5V rails
Space constrained applications
Extreme temperatures/no air flow environments
Noise sensitive applications (i.e. transceiver, medical)
Performance Benefits
Operates at high ambient temperatures
Low radiated emissions (EMI) complies with EN55022
class B standard (Note 2)
Passes 10V/m radiated immunity EMI test standard
EN61000 4-3
Passes vibration standard
MIL-STD-883 Method 2007.2 Condition A
JESD22-B103B Condition 1
Passes drop standard
MIL-STD-883 Method 2002.3 Condition B
JESD22-B110 Condition B
System Performance
Current Derating (V
OUT = 3.3V)
301182a5
Efficiency (V
OUT = 3.3V)
30118271
Radiated Emissions (EN 55022, Class B)
301182a6
Note 1:
θ
JA measured on a 2.25” x 2.25” (5.8 cm x 5.8 cm) four layer board. Refer to PCB Layout Diagrams or Evaluation Board Application Note: AN-2074.
Note 2: EN 55022:2006, +A1:2007, FCC Part 15 Subpart B: 2007. See Figure 5 and layout for information on device under test.
© 2010 National Semiconductor Corporation
301182
www.national.com


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