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LMZ10503EXT 数据表(PDF) 14 Page - National Semiconductor (TI) |
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LMZ10503EXT 数据表(HTML) 14 Page - National Semiconductor (TI) |
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14 / 22 page ![]() LMZ10503EXT Application Circuit Schematic and BOMs This section provides several application solutions with an associated bill of materials. The compensation for each solu- tion was optimized to work over the full input range. Many applications have a fixed input voltage rail. It is possible to modify the compensation to obtain a faster transient response for a given input voltage operating point. 30118254 FIGURE 2. TABLE 3. Bill of Materials, V IN = 3.3V to 5V, VOUT = 2.5V, IOUT (MAX) = 3A, Optimized for Electrolytic Input and Output Capacitance Designator Description Case Size Manufacturer Manufacturer P/N Quantity U1 SIMPLE SWITCHER ® TO-PMOD-7 National Semiconductor LMZ10503EXTTZ 1 C in1 150 µF, 6.3V, 18 m Ω C2, 6.0 x 3.2 x 1.8 mm Sanyo 6TPE150MIC2 1 C O1 330 µF, 6.3V, 18 m Ω D3L, 7.3 x 4.3 x 2.8 mm Sanyo 6TPE330MIL 1 R fbt 100 k Ω 0603 Vishay Dale CRCW0603100KFKEA 1 R fbb 47.5 k Ω 0603 Vishay Dale CRCW060347K5FKEA 1 R comp 15 k Ω 0603 Vishay Dale CRCW060315K0FKEA 1 C comp 330 pF, ±5%, C0G, 50V 0603 TDK C1608C0G1H331J 1 C SS 10 nF, ±10%, X7R, 16V 0603 Murata GRM188R71C103KA01 1 TABLE 4. Bill of Materials, V IN = 3.3V, VOUT = 0.8V, IOUT (MAX) = 3A, Optimized for Solution Size and Transient Response Designator Description Case Size Manufacturer Manufacturer P/N Quantity U1 SIMPLE SWITCHER ® TO-PMOD-7 National Semiconductor LMZ10503EXTTZ 1 C in1, CO1 47 µF, X5R, 6.3V 1206 TDK C3216X5R0J476M 2 R fbt 110 k Ω 0402 Vishay Dale CRCW0402100KFKED 1 R comp 1.0 k Ω 0402 Vishay Dale CRCW04021K00FKED 1 C comp 27 pF, ±5%, C0G, 50V 0402 Murata GRM1555C1H270JZ01 1 C SS 10 nF, ±10%, X7R, 16V 0402 Murata GRM155R71C103KA01 1 In the case where the output voltage is 0.8V, it is recommended to remove R fbb and keep Rfbt, Rcomp, and Ccomp for a type III compensation. www.national.com 14 |
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