MCP98243 datasheet(4/62 Pages) MICROCHIP

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MCP9843/98243

DS22153C-page 4

MCP98243 EEPROM DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 1.8V to 5.5V, GND = Ground,

and TA = -20°C to +125°C.

Parameters

Sym

Min

Typ

Max

Unit

Conditions

Power Supply

Operating Voltage Range

VDD

1.8

—

5.5

Current, EEPROM write

IDD_EE

—

1100

2000

µA

Sensor in Shutdown Mode (for tWC),

(Note 1)

Current, EEPROM read

IDD_EE

—

100

500

µA

Sensor in Shutdown Mode (Note 1)

Power On Reset (POR)

VPOR_EE

—

1.6

—

EEPROM

Write Cycle time (byte/page)

tWC

—3

Endurance TA = +25°C

—

cycles Number of Write Cycles, VDD = 5V (Note 2)

EEPROM Write Temperature

EEWRITE

0—

°C

EEPROM Read Temperature

EEREAD

-40

—

125

°C

For minimum read temperature, see Note 2

Write Protect Voltage

SWP and CWP Voltage

VHV

—

Applied at A0 pin (Note 3)

PWP Voltage

—

VDD

—V

Note 1:

For VDD ranges of 1.8V to the temperature sensor VPOR_TS, the temperature sensor becomes partially biased and

consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown command. See Figure 2-15.

Characterized but not production tested. For endurance estimates in a specific application, please consult the Total

Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com.

The range of voltage applied at A0 pin for Permanent Write Protect is GND to VDD + 1V. See Figure 2-13 and

Section 5.3.3 “Write Protection”.

INPUT/OUTPUT PIN DC CHARACTERISTICS (NOTE 1)

Electrical Specifications: Unless otherwise indicated, VDD = 1.8V to 5.5V, GND = Ground and

TA = -20°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Serial Input/Output (SCL, SDA, A0, A1, A2) (Note 2)

Input

High-level Voltage

VIH

0.7VDD

——

Low-level Voltage

VIL

——

0.3VDD

Input Current

IIN

—

±5

µA

SDA and SCL only

Input Impedance (A0, A1, A2)

ZIN

—1

—

VIN > VIH

Input Impedance (A0, A1, A2)

ZIN

—200

—

VIN < VIL

Output (SDA only)

Low-level Voltage

VOL

——

0.4

IOL= 3 mA

High-level Current (leakage)

IOH

——

µA

VOH = VDD

Low-level Current

IOL

6—

—

VOL = 0.6V

Capacitance

CIN

—5

—

SDA and SCL Inputs

Hysteresis

VHYST

—

0.05VDD

—V

VDD > 2V

—0.1VDD

—V

VDD < 2V

Spike Supression

TSP

—

Note 1: These specifications apply for the Temperature Sensor and EEPROM.

2: For VDD ranges of 1.8V to the temperature sensor VPOR_TS, the temperature sensor becomes partially

biased and consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown

command. See Figure 2-15.

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