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MAX8564EUB 数据表(PDF) 11 Page - Maxim Integrated Products

部件名 MAX8564EUB
功能描述  1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers
PDF  15 Pages
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制造商  MAXIM [Maxim Integrated Products]
网页  https://www.maximintegrated.com/en.html
标志 MAXIM - Maxim Integrated Products

MAX8564EUB 数据表(HTML) 11 Page - Maxim Integrated Products

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To set the output voltage to 0.5V, disconnect RB from
FB_ and connect it to OUT_; this change maintains the
minimum load requirement on the output. In this case,
RA can vary from 1k
Ω to 10kΩ.
Input and Output Capacitor Selection
The input filter capacitor aids in providing low input
impedance to the regulator and also reduces peak cur-
rents drawn from the power source during transient
conditions. Use a minimum 2.2µF ceramic capacitor
from IN_ (drain of the external pass n-MOSFET) to GND
(see Figures 1 and 2). If large line transients or load
transients are expected, increase the input capaci-
tance to help minimize output voltage changes.
The output filter capacitor and its equivalent series
resistance (ESR) contribute to the stability of the regula-
tor (see the Stability Compensation section) and affect
the load-transient response. If large step loads (no load
to full load) are expected, and a very fast response
(less than a few microseconds) is required, use a
100µF, 18m
Ω POSCAP for the output capacitor. If a
larger capacitance is desired, keep the capacitance
ESR product (COUT x RESR) in the 1µs to 5µs range.
If the application expects smaller load steps (less than
50% of full load), then use a 6.8µF ceramic capacitor or
larger per ampere of maximum output current. This
option reduces the size and cost of the regulator circuit.
Note that some ceramic dielectrics exhibit large capaci-
tance variation with temperature. Use X7R or X5R
dielectrics to ensure sufficient capacitance at all operat-
ing temperatures. Tantalum and aluminum capacitors
are not recommended.
Power MOSFET Selection
The MAX8563/MAX8564/MAX8564A use an n-channel
MOSFET as the series pass transistor instead of a p-
channel MOSFET to reduce cost. The selected MOS-
FET must have a gate threshold voltage that meets the
following criteria:
VGS_MAX
≤ VDD - VOUT_
where VDD is the controller bias voltage, and VGS_MAX
is the maximum gate voltage required to yield the on-
resistance (RDS_ON) specified by the manufacturer’s
data sheet. RDS_ON multiplied by the maximum output
current (load current) is the maximum voltage dropout
across the MOSFET, VDS_MIN. Make sure that VDS_MIN
meets the condition below to avoid entering dropout,
where output voltage starts to decrease and any ripple
on the input also passes through to the output:
VIN_MIN > VDS_MIN + VOUT
where VIN_MIN is the minimum input voltage at the drain
of the MOSFET. VDS_MIN has a positive temperature
coefficient; therefore, the value of VDS_MIN at the highest
operating junction temperature should be used.
For thermal management, the maximum power dissipa-
tion in the MOSFET is calculated by:
PD = (VIN_MAX - VOUT) x IOUT_MAX
The MOSFET is typically in an SMT package. Refer to
the MOSFET data sheet for the PC board area needed
to meet the maximum operating junction temperature
required.
Stability Compensation
Connect a resistor, RC, and a capacitor, CC, in series
from the DRV_ pin to GND. The values of the compen-
sation network depend upon the external MOSFET
characteristics, the output current range, and the pro-
grammed output voltage. The following parameters are
needed from the MOSFET data sheet: the input capaci-
tance (CISS at VDS = 1V), the typical forward transcon-
ductance (gFS), and the current at which gFS was
measured (IDFS). Calculate the transconductance of
the FET at the maximum load current (IOUT_MAX):
gg
I
I
C MAX
FS
OUT MAX
DFS
()
_
RR
V
V
RV
AB
OUT
FB
B
OUT
⎝⎜
⎠⎟
×
()
−−
12
1
±1%, Ultra-Low Output Voltage, Dual and Triple
Linear n-FET Controllers
______________________________________________________________________________________
11
MAX8563
MAX8564
MAX8564A
FB_
OUT_
RA
RB
Figure 5. Adjustable Output Voltage



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