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MAX8564EUB 数据表(PDF) 2 Page - Maxim Integrated Products

部件名 MAX8564EUB
功能描述  1%, Ultra-Low Output Voltage, Dual and Triple Linear n-FET Controllers
PDF  15 Pages
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制造商  MAXIM [Maxim Integrated Products]
网页  https://www.maximintegrated.com/en.html
标志 MAXIM - Maxim Integrated Products

MAX8564EUB 数据表(HTML) 2 Page - Maxim Integrated Products

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±1%, Ultra-Low Output Voltage, Dual and Triple
Linear n-FET Controllers
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = VEN1 = VEN2 = VEN3 = 5V, VGND = 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ............................................................-0.3V to +14V
DRV1, DRV2, DRV3, EN1, EN2,
EN3 to GND............................................-0.3V to (VDD + 0.3V)
FB1, FB2, FB3, POK1, POK2, POK3 to GND ...........-0.3V to +6V
Continuous Power Dissipation (TA = +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ........444.4mW
16-Pin QSOP (derate 8.3mW/°C above +70°C)........666.7mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
VDD Voltage Range
4.5
13.2
V
VDD Undervoltage-Lockout Threshold
Rising, 200mV hysteresis (typ)
3.56
3.76
4.00
V
VEN_ = VDD = 12V (MAX8563)
930
1600
VDD Quiescent Current
VEN_ = VDD = 12V (MAX8564/MAX8564A)
660
1200
µA
VDD Shutdown Current
EN1 = EN2 = EN3 = GND, VDD = 12V
25
µA
LDOs
TA = 0°C to +85°C
0.494
0.5
0.504
FB_ Accuracy
TA = -40°C to +85°C
0.489
0.509
V
TA = +25°C
-100
+100
FB_ Input Bias Current
TA = +85°C
-8
nA
MAX8563, MAX8564
100
DRV_ Soft-Start Charging Current
MAX8564A
10
µA
TA = 0°C to +85°C
4
DRV_ Max Sourcing Current
VFB_ = 0.45V
TA = -40°C to +85°C
3
7
mA
TA = 0°C to +85°C
3
DRV_ Max Sinking Current
VFB_ = 0.6V
TA = -40°C to +85°C
1.8
7
mA
VDD = 5V, VFB_ = 0.46V
4.7
DRV_ Max Voltage
VDD = 13.2V, VFB_ = 0.46V
8.0
10.9
V
FB_ Slow Short-Circuit Threshold
Measured at FB_ (falling)
400
mV
FB_ Fast Short-Circuit Threshold
Measured at FB_ (falling)
300
mV
Slow Short-Circuit Timer
50
µs
FB_ to DRV_ Transconductance
0.115
0.24
0.460
Mho
LOGIC
EN_ Input Low Level
0.7
V
EN_ Input High Level
1.3
V
TA = +25°C
-0.1
+0.1
EN_ Input Leakage Current
VEN_ = 0 and VDD,
VDD = 13.2V
TA = +85°C
0.001
µA



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