M95256-DR, M95256, M95256-W, M95256-R

DC and AC parameters

Doc ID 12276 Rev 11

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Table 15.

DC characteristics (M95256-W, device grade 3)

Symbol

Parameter

Test condition

Min.

Max.

Unit

Input leakage current

± 2

µA

Output leakage current

± 2

µA

Supply current (Read)

Q = open

3mA

(1)

Supply current (Write)

6mA

Supply current

(Standby Power mode)

5µA

Input low voltage

–0.45

V

Input high voltage

V

Output low voltage

0.4

V

Output high voltage

V

1.

Characterized value, not tested in production.

Table 16.

Symbol

Parameter

Min

Max

Unit

Input leakage current

± 2

µA

Output leakage current

± 2

µA

Supply current (Read)

mA

(5)

Supply current (Write)

3mA

Supply current

(Standby Power mode)

3µA

Input low voltage

1.8 V

 V

–0.45

V

Input high voltage

1.8 V

 V

V

Output low voltage

0.3

V

Output high voltage

V

1.

New product identified with process letter K.

2.

If the application uses the M95256-R, M95256-DR device with 2.5 V < VCC < 5.5 V and -40 °C < TA < +85 °C, please refer

to Table 14: DC characteristics (M95256-W, device grade 6) instead of the above table.

3.

2 mA for the new product identified with the process letter K (Preliminary data).

4.

Only the new product identified with the process letter K can run at 5 MHz (Preliminary data)

5.

Characterized value, not tested in production.