SPD04P10PLG datasheet(3/9 Pages) INFINEON

部件名	SPD04P10PLG

功能描述	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	9 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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3 / 9 page

SPD04P10PL G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

280

372

Output capacitance

C oss

-70

Reverse transfer capacitance

C rss

-34

Turn-on delay time

t d(on)

4.6

6.9

Rise time

t r

5.7

8.6

Turn-off delay time

t d(off)

-18

Fall time

t f

5.0

7.5

Gate Charge Characteristics

Gate to source charge

Q gs

1.1

1.5

Gate to drain charge

Q gd

4.6

6.9

Gate charge total

Q g

-12

Gate plateau voltage

V plateau

4.1

Reverse Diode

Diode continuous forward current

I S

-4.2

Diode pulse current

I S,pulse

16.8

Diode forward voltage

V SD

V GS=0 V, I F=-4.2 A,

T j=25 °C

0.94

1.2

Reverse recovery time

t rr

-68

Reverse recovery charge

Q rr

178

223

2) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=-25 V,

f =1 MHz

V DD=-50 V, V GS=-

10 V, I D=-4.2 A,

R G=6 Ω

V DD=-80 V, I D=-4.2 A,

V GS=0 to -10 V

V R=50 V, I F=|I S|,

di F/dt =100 A/µs

Rev 1.

page 3

200

9-02-16

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