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SPD04P10PLG 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 SPD04P10PLG
功能描述  SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode
PDF  9 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPD04P10PLG 数据表(HTML) 2 Page - Infineon Technologies AG

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SPD04P10PL G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJC
-
-
3.9
K/W
Thermal resistance,
junction - ambient
R thJA
minimal footprint,
steady state
--
75
6 cm
2 cooling area1),
steady state
--
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 mA
-100
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-380 µA
-1
-1.5
-2
Zero gate voltage drain current
I DSS
V DS=-100 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
µA
V DS=-100 V, V GS=0 V,
T j=150 °C
-
-10
-100
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5 V, I D=-
2.75 A
-
787
1050
m
V GS=-10 V, I D=-3.0 A
-
550
850
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-3.0 A
1.5
3.0
-
S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev 1.
5
page 2
200
9-02-16



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