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SPD04P10PLG 数据表(PDF) 1 Page - Infineon Technologies AG |
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SPD04P10PLG 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page ![]() SPD04P10PL G SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-4.2 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22- A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 -4.2 3.0 38 Value 57 -16.8 steady state 55/175/56 -55 ... 175 ±20 260 °C 1A (250 V to 500 V) V DS -100 V R DS(on),max 850 m Ω I D -4.2 A Product Summary Type Package Marking Lead free Packing SPD04P10PL G PG-TO252-3 04P10PL Yes Non dry PG-TO-252 -3 Rev 1. 5 page 1 200 9-02-16 Tape and reel information 1000 pcs / reel |
类似零件编号 - SPD04P10PLG |
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类似说明 - SPD04P10PLG |
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