SPP18P06P_09 datasheet(3/9 Pages) INFINEON

部件名	SPP18P06P

功能描述	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	9 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

3 / 9 page

SPP18P06P

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

690

860

Output capacitance

C oss

230

290

Reverse transfer capacitance

C rss

120

Turn-on delay time

t d(on)

12.0

18.0

Rise time

t r

5.8

8.7

Turn-off delay time

t d(off)

-25

Fall time

t f

16.5

Gate Charge Characteristics

Gate to source charge

Q gs

-4.1

-5.5

Gate to drain charge

Q gd

-11

-17

Gate charge total

Q g

-21

-28

Gate plateau voltage

V plateau

-5.94

Reverse Diode

Diode continuous forward current

I S

18.60 A

Diode pulse current

I S,pulse

-74.8

Diode forward voltage

V SD

V GS=0 V, I F=-18.6 A,

T j=25 °C

-0.99

-1.33

Reverse recovery time

t rr

105

Reverse recovery charge

Q rr

139

208

T A=25 °C

Values

V GS=0 V, V DS=-25 V,

f =1 MHz

V DD=-30 V, V GS=-

10 V, I D=-13.2 A,

R G=2.7 Ω

V DD=-48 V, I D=-

18.6 A, V GS=0 to -10 V

V R=30 V, I F=|I S|,

di F/dt =100 A/µs

Rev1.

page 3

200

9-04-14

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