SPP18P06P_09 datasheet(2/9 Pages) INFINEON

部件名	SPP18P06P

功能描述	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	9 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

2 / 9 page

SPP18P06P

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - case

R thJC

1.85

K/W

Thermal resistance,

junction - ambient, leaded

R thJA

SMD version, device on PCB:

R thJA

minimal footprint

K/W

6 cm

2 cooling area1)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-60

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-

1000 µA

-2.1

2.7

-4

Zero gate voltage drain current

I DSS

V DS=-60 V, V GS=0 V,

T j=25 °C

-0.1

-1

µA

V DS=-60 V, V GS=0 V,

T j=150 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-20 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-10 V, I D=-13.2 A

102

130

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-13.2 A

510

1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical without blown air.

Values

Rev1.

page 2

200

9-04-14

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