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SPP18P06P 数据表(PDF) 1 Page - Infineon Technologies AG |
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SPP18P06P 数据表(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page ![]() SPP18P06P G SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=100 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω mJ Avalanche energy, periodic limited by Tjmax E AR 8 Reverse diode dv /dt dv /dt I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C 1) W Operating and storage temperature T j, T stg °C ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 55/150/56 "-55 ... +175" ±20 -6 260 °C -18.7 -13.2 81.1 Value 151 -74.8 steady state V DS -60 V R DS(on),max 0.13 Ω I D -18.6 A Product Summary Type Package Tape and reel information Marking Lead free SPP18P06P G PG-TO220-3 Yes PG-TO220-3 Rev1. 8 page 1 200 9-04-14 50pcs / tube 18P06P · Pb-free lead finishing; RoHS compliant |
类似零件编号 - SPP18P06P_09 |
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类似说明 - SPP18P06P_09 |
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