DMN2016UTS

Document number: DS31995 Rev. 1 - 2

2 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMN2016UTS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.4

0.72

1.0

V

Static Drain-Source On-Resistance

-

11

13

14.5

16.5

mΩ

Forward Transfer Admittance

-

19

-

S

Diode Forward Voltage

-

0.65

1.2

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

1495

-

pF

f = 1.0MHz

Output Capacitance

-

161

-

pF

Reverse Transfer Capacitance

-

152

-

pF

Gate Resistance

-

1.42

-

Ω

Total Gate Charge

-

16.5

-

nC

Gate-Source Charge

-

2.5

-

nC

Gate-Drain Charge

-

3.2

-

nC

Turn-On Delay Time

-

10.39

-

ns

Turn-On Rise Time

-

11.66

-

ns

Turn-Off Delay Time

-

59.38

-

ns

Turn-Off Fall Time

-

16.27

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

5

10

15

20

25

30

00.5

11.5

2

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.2V

GS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 1.5V

GS

0

5

10

15

20

25

30

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A