DMN2016UTS

Document number: DS31995 Rev. 1 - 2

4 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMN2016UTS

100

1,000

10,000

04

8

12

16

20

Fig. 9 Typical Capacitance

V

, DRAIN-SOURCE VOLTAGE (V)

DS

f = 1MHz

1

10

100

1,000

10,000

100,000

0

5

10

15

20

25

30

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

Fig. 11 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12

θ

R

(t) = r(t) *

θJA

R

R

= 136°C/W

θ

θ

JA

JA

P(pk)

0.001

0.01

0.1

1

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

Part Number

Case

Packaging

DMN2016UTS-13

TSSOP-8L

2500 / Tape & Reel

Notes:

7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

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Part no

Year: “09” = 2009

Xth week : 01~52

1

4

8

5

N2016U

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