DMN2016UTS

Document number: DS31995 Rev. 1 - 2

3 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMN2016UTS

0

0.01

0.02

0.03

0.04

0.05

0.06

0

5

10

15

20

25

30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V

= 1.8V

GS

V

= 4.5V

GS

V

= 10V

GS

0

0.01

0.02

0.03

0.04

0

5

10

15

20

25

30

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 8.0V

I = 10A

GS

D

V

= 4.5V

I = 5A

GS

D

0

0.01

0.02

0.03

Fig. 6 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE (°C)

J

V

= 8.0V

I = 10A

GS

D

V

= 4.5V

I = 5A

GS

D

0

0.4

0.8

1.2

1.6

2.0

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

I = 250µA

D

I = 1mA

D

0

4

8

12

16

20

0

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0.2

T = 25°C

A