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STL15DN4F5 数据表(PDF) 1 Page - STMicroelectronics |
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STL15DN4F5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() September 2010 Doc ID 17739 Rev 1 1/12 12 STL15DN4F5 Dual N-channel 40 V, 8 m Ω, 15 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ Low gate drive power losses Application ■ Switching applications – Automotive Description The device is a dual N-channel STripFET™ V. This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Figure 1. Internal schematic diagram Type VDSS RDS(on) max. ID STL15DN4F5 40 V 9 m Ω 15 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ (5x6) Double island Table 1. Device summary Order code Marking Package Packaging STL15DN4F5 15DN4F5 PowerFLAT™(5x6) Double island Tape and reel www.st.com |
类似零件编号 - STL15DN4F5 |
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类似说明 - STL15DN4F5 |
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