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STL15DN4F5 数据表(PDF) 3 Page - STMicroelectronics |
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STL15DN4F5 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STL15DN4F5 Electrical ratings Doc ID 17739 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according Rthj-c Drain current (continuous) at TC = 25 °C (silicon limited) 60 A ID (2) 2. The value is rated according Rthj-pcb Drain current (continuous) at TC = 25 °C 15 A ID (2) Drain current (continuous) at TC = 100°C 10 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 60 A PTOT (1) Total dissipation at TC = 25°C 60 W PTOT (2) Total dissipation at TC = 25°C, t < 10 sec 4.3 W Derating factor 0.03 W/°C TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 2.5 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec (see Figure 3) Thermal resistance junction-ambient 35 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current, (pulse width limited by Tj max.) 7.5 A EAS (1) 1. Tested at wafer level only. Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) 150 mJ |
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