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STL15DN4F5 数据表(PDF) 5 Page - STMicroelectronics |
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STL15DN4F5 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STL15DN4F5 Electrical characteristics Doc ID 17739 Rev 1 5/12 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 20 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) - 18 45 32 5 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current - 15 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 60 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 15 A, VGS = 0 - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs, VDD = 32 V, Tj = 150 °C - 30 35 2.2 ns nC A |
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