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RO4350B 数据表(PDF) 6 Page - Freescale Semiconductor, Inc

部件名 RO4350B
功能描述  RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
PDF  13 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

RO4350B 数据表(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
TYPICAL CHARACTERISTICS — CW
14
24
10
10
60
23
21
17
55
45
40
35
25
20
Pout, OUTPUT POWER (WATTS) CW
Figure 9. CW Power Gain and Drain Efficiency versus Output Power
22
19
16
100
400
VDD =50 Vdc
IDQ =10 mA
f = 1300 MHz
TC =25°C
15
15
Gps
ηD
18
20
16
25
10
23
22
21
Pout, OUTPUT POWER (WATTS) CW
Figure 10. CW Power Gain versus Output Power
24
20
100
400
17
IDQ = 700 mA
500 mA
Figure 11. CW Efficiency versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IDQ = 700 mA
10
60
10
30
50
400
20
40
55
100
10 mA
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature — CW
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 230 W CW, and ηD = 55%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
106
104
110
130
150
170
190
210
230
45
35
25
15
100 mA
350 mA
500 mA
350 mA
100 mA
10 mA
19
18
30
50
VDD =50 Vdc
f = 1300 MHz
TC =25°C
VDD =50 Vdc
f = 1300 MHz
TC =25°C
107
105



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