RO4350B datasheet(1/13 Pages) FREESCALE

部件名	RO4350B

功能描述	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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制造商	FREESCALE [Freescale Semiconductor, Inc]

网页	http://www.freescale.com

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MRF6V13250HR3 MRF6V13250HSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power transistors designed for applications operating at 1300 MHz.

These devices are suitable for use in pulsed and CW applications.

• Typical Performance: VDD =50 Volts,IDQ = 100 mA

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

ηD

(%)

IRL

(dB)

Pulsed (200 μsec,

10% Duty Cycle)

250 Peak

1300

22.7

57.0

--18

• Typical Performance: VDD =50 Volts,IDQ =10 mA, TC =25°C

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

ηD

(%)

IRL

(dB)

CW

230 CW

1300

21.0

55.0

--17

• Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz

at all Phase Angles

• 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec

• CW Capable

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 50 VDD Operation

• Characterized from 20 V to 50 V for Extended Power Range

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +120

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

TC

150

°C

Operating Junction Temperature (1,2)

TJ

225

°C

Total Device Dissipation @ TC =25°C

Derate above 25°C

PD

476

2.38

W

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty

Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz

CW: Case Temperature 77°C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz

ZθJC

RθJC

0.07

0.42

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

1300 MHz, 250 W, 50 V

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF6V13250HR3

MRF6V13250HSR3

CASE 465--06, STYLE 1

NI--780

MRF6V13250HR3

CASE 465A--06, STYLE 1

NI--780S

MRF6V13250HSR3

Document Number: MRF6V13250H

Rev. 0, 6/2011

Freescale Semiconductor

Technical Data

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