RO4350B datasheet(2/13 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRF6V13250HR3 MRF6V13250HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =50 mA)

V(BR)DSS

120

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =90 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 640 μAdc)

VGS(th)

1.0

1.8

2.7

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

2.0

2.4

3.0

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.58 Adc)

VDS(on)

0.1

0.25

0.3

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.2

—

Output Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

340

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz

Pulsed, 200 μsec Pulse Width, 10% Duty Cycle

Power Gain

Gps

21.5

22.7

24.0

Drain Efficiency

ηD

53.5

57.0

—

Input Return Loss

IRL

—

--18

--9

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ =10 mA, Pout = 230 W CW, f = 1300 MHz, TC =25°C

Power Gain

Gps

—

21.0

—

Drain Efficiency

ηD

—

55.0

—

Input Return Loss

IRL

—

--17

—

Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.),

f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle

VSWR 10:1 at all Phase Angles

No Degradation in Output Power

1. Part internally input matched.

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