UBA2015AP datasheet(27/42 Pages) PHILIPS

27 / 42 page

UBA2016A_15_15A

All information provided in this document is subject to legal disclaimers.

Objective data sheet

Rev. 1 — 20 May 2011

27 of 42

NXP Semiconductors

UBA2016A/15/15A

600 V fluorescent lamp driver

Idch(CIFB)

discharge current on pin CIFB

preheat overcurrent detected;

VCIFB =1.5 V

7.7

9.0

10.3

μA

fsw(ph)

preheat switching frequency

UBA2015; UBA2015A

Rext(PH/EN) =40kΩ;

Cext(CF) =200 pF

97.7

102.4 kHz

Rext(PH/EN) = 100 kΩ;

Cext(CF) =200 pF

kHz

HB lamp ignition

fsw(high)/fsw(low)

high switching frequency to low

switching frequency ratio

2.2

2.4

2.6

Vfsw(low)(CIFB)

low switching frequency voltage on pin

CIFB

-3.0

Vth(lod)(IFB)

lamp on detection threshold voltage on

pin IFB

1.00

1.11

1.22

Vth(lod)(VFB)

lamp on detection threshold voltage on

pin VFB

0.9

1.0

1.1

V(Vreg−Vth(lod))

regulation voltage to lamp-on-detect

threshold voltage difference

pin IFB

160

220

td(lod)

lamp on detection delay time

HB normal operation

fsw(low)

low switching frequency

CCF = 200 pF

kHz

Vhigh(CF)

high voltage on pin CF

2.5

Vreg(IFB)

regulation voltage on pin IFB

VCIFB = 2 V; VIFB > 0 V

1.22

1.27

1.32

VCIFB = 2 V; VDIM = 127 mV;

VIFB >0V

127

177

VCIFB = 2 V; VIFB < 0 V

−1.34 −1.27 −1.2

VCIFB = 2 V; VDIM = 127 mV;

VIFB < 0 V

−197 −127 −57

Ich(low)(CF)

low charge current on pin CF

μA

Vi(IFB)

input voltage range on pin IFB

VCIFB = 2 V

−3.1

+3.1

Ri(IFB)

input resistance on pin IFB

VIFB =1V

VIFB = −1V

Ven(PH/EN)

enable voltage on pin PH/EN

0.21

0.25

0.29

VO(burn)(PH/EN)

burn state output voltage on pin PH/EN

Burn state

1.21

1.27

1.33

gm(IFB)

IFB transconductance

VCIFB = 2 V

16.5

μA/V

IO(clamp)(PH/EN)

output current clamp on pin PH/EN

Preheat, Ignition or Burn

states; VPH/EN =0.2 V

0.16

HB driver

Isource(GLHB)

source current on pin GLHB

VGLHB =4V

−105 −90

−75

Rsink(GLHB)

sink resistance on pin GLHB

VGLHB = 2 V

13.5

18.5

Isource(GHHB)

source current on pin GHHB

VSHHB =0 V; VGHHB =4 V

−105 −90

−75

Table 6.

Characteristics …continued

Tamb = 25 °C; settings according to default setting[1]; all voltages referenced to GND; current flow into the IC is positive;

unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

UBA2015AP 数据表(PDF) 27 Page - NXP Semiconductors

UBA2015AP 数据表(HTML) 27 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

数据表下载