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L6228Q 数据表(PDF) 7 Page - STMicroelectronics |
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L6228Q 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 32 page ![]() L6228Q Electrical characteristics Doc ID 14321 Rev 4 7/32 3 Electrical characteristics Table 5. Electrical characteristics (TA = 25 °C, Vs = 48 V, unless otherwise specified) Symbol Parameter Test condition Min Typ Max Unit VSth(ON) Turn-on threshold 5.8 6.3 6.8 V VSth(OFF) Turn-off threshold 5 5.5 6 V IS Quiescent supply current All bridges OFF; TJ = -25 °C to 125 °C (1) 510 mA Tj(OFF) Thermal shutdown temperature 165 °C Output DMOS transistors RDS(on) High-side + low-side switch ON resistance TJ = 25 °C 1.47 1.69 Ω TJ =125 °C (1) 2.35 2.70 Ω IDSS Leakage current EN = Low; OUT = VS 2mA EN = Low; OUT = GND -0.3 mA Source drain diodes VSD Forward ON voltage ISD = 1.4 A, EN = LOW 1.15 1.3 V trr Reverse recovery time If = 1.4 A 300 ns tfr Forward recovery time 200 ns Logic inputs (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW) VIL Low level logic input voltage -0.3 0.8 V VIH High level logic input voltage 2 7 V IIL Low level logic input current GND logic input voltage -10 µA IIH High level logic input current 7 V logic input voltage 10 µA Vth(ON) Turn-on input threshold 1.8 2.0 V Vth(OFF) Turn-off input threshold 0.8 1.3 V Vth(HYS) Input threshold hysteresis 0.25 0.5 V Switching characteristics tD(ON)EN Enable to output turn-on delay time (2) ILOAD =1.4 A, resistive load 500 650 800 ns tD(OFF)EN Enable to output turn-off delay time (2) 500 800 1000 ns tRISE Output rise time (2) 40 250 ns tFALL Output fall time (2) 40 250 ns tDCLK Clock to output delay time (3) 2µs tCLK(min)L Minimum clock time (4) 1µs tCLK(min)H Minimum clock time (4) 1µs |
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