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SC1205CS 数据表(PDF) 4 Page - Semtech Corporation |
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SC1205CS 数据表(HTML) 4 Page - Semtech Corporation |
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4 / 12 page ![]() SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER © 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 PRELIMINARY - December 7, 1999 4 AC OPERATING SPECIFICATIONS PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS HIGH-SIDE DRIVER rise time tr TG, CI = 3nF, V BST - VDRN = 4.6V, T J = 125°C 14 23 ns fall time tf TG CI = 3nF, V BST - VDRN = 4.6V, T J = 125°C 12 19 ns propagation delay time, TG going high tpdh TG CI = 3nF, V BST - VDRN = 4.6V, T J = 125°C 20 32 ns propagation delay time, TG going low tpdl TG CI = 3nF, V BST - VDRN = 4.6V, T J = 125°C 15 24 ns LOW-SIDE DRIVER rise time tr BG CI = 3nF, V V_5 = 4.6V, T J = 125°C 15 24 ns fall time tr BG CI = 3nF, V V_5 = 4.6V, T J = 125°C 13 21 ns propagation delay time BG going high tpdh BGHI CI = 3nF, V V_5 = 4.6V, T J = 125°C, DRN < 1V 12 19 ns progagation delay time BG going low tpdl BG CI = 3nF, V V_5 = 4.6V, T J = 125°C 7 12 ns UNDER-VOLTAGE LOCKOUT V_5 ramping up tpdh UVLO EN is High 10 us V_5 ramping down tpdl UVLO EN is High 10 us |
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