SC1205

HIGH SPEED SYNCHRONOUS POWER

MOSFET DRIVER

© 1999 SEMTECH CORP.

652 MITCHELL ROAD NEWBURY PARK CA 91320

PRELIMINARY - December 7, 1999

1

BLOCK DIAGRAM

PIN CONFIGURATION

Top View

(SO-8)

DESCRIPTION

The SC1205 is a cost effective Dual MOSFET Driver

designed for switching High and Low side Power

MOSFETs. Each driver is capable of driving a

3000pF load in 20ns rise/fall time and has a 20ns max

propagation delay from input transition to the gate of

the power FET’s. An internal Overlap Protection Cir-

cuit prevents shoot-through from Vin to GND in the

main switching and synchronous MOSFET’s. The

Overlap Protection circuit ensures the Bottom FET

does not turn on until the Top FET source has reached

a voltage low enough to prevent cross-conduction.

The high current drive capability (2A peak) allows fast

switching, thus reducing switching losses at high

(1MHz) PWM frequencies. The high voltage CMOS

process allows operation from 5-25 Volts at top MOS-

FET drain, thus making SC1205 suitable for battery

powered applications. Connecting Enable pin (EN) to

logic low shuts down both drives and reduces operat-

ing current to less than 10uA.

An Under-Voltage-Lock-Out circuit is included to guar-

antee that both driver outputs are low when the 5V

logic level is less than or equal to 4.4V (typ) at supply

ramp up (4.35V at supply ramp down). An Internal

temperature sensor shuts down all drives in the event

of overtemperature. SC1205 is fabricated utilizing

CMOS technology for low quiescent current. The

SC1205 is offered in a standard SO-8 package.

FEATURES

load)

shoot-through protection

APPLICATIONS

of small inductors and low cost caps in place of

electrolytics

TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com

DEVICE

(1)

PACKAGE

TEMP. RANGE (T

SC1205CS

SO-8

0 - 125°C

ORDERING INFORMATION

Note:

(1) Add suffix ‘TR’ for tape and reel.