SIR818DP datasheet(1/13 Pages) VISHAY

部件名	SIR818DP

功能描述	N-Channel 30 V (D-S) MOSFET

PDF	13 Pages

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

SiR818DP

New Product

Document Number: 67846

S11-0858-Rev. A, 02-May-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Gen III Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low-Side Switch for DC/DC Converters

- Notebook PC

- Servers

- POL

•OR-ing

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a, g

Qg (Typ.)

30

0.0028 at VGS = 10 V

50g

30.5 nC

0.0033 at VGS = 4.5 V

50g

Ordering Information: SiR818DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

g. Package limited.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

50g

A

TC = 70 °C

50g

TA = 25 °C

32b, c

TA = 70 °C

25b, c

Pulsed Drain Current (t = 300 µs)

IDM

80

Continuous Source-Drain Diode Current

TC = 25 °C

IS

50g

TA = 25 °C

4.7b, c

Single Pulse Avalanche Current

L =

0.1 mH

IAS

50

Single Pulse Avalanche Energy

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

PD

69

W

TC = 70 °C

44

TA = 25 °C

5.2b, c

TA = 70 °C

3.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

19

24

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.2

1.8

类似零件编号 - SIR818DP

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