SIR818DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 67846

S11-0858-Rev. A, 02-May-11

www.vishay.com

Vishay Siliconix

SiR818DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

DS - Drain-to-Source Voltage (V)

GS = 10 V thru 3 V

GS = 2 V

0.0020

0.0022

0.0024

0.0026

0.0028

0.0030

D - Drain Current (A)

GS = 4.5 V

GS = 10 V

g - Total Gate Charge (nC)

DS = 10 V

D = 20 A

DS = 15 V

DS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

1.0

2.0

3.0

4.0

5.0

GS - Gate-to-Source Voltage (V)

C = 25 °C

C = 125 °C

C = - 55 °C

1000

2000

3000

4000

5000

DS - Drain-to-Source Voltage (V)

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0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

255075

100

125

150

J - Junction Temperature (°C)

D = 20 A

GS = 10 V

GS = 4.5 V

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