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Document Number: 67846

S11-0858-Rev. A, 02-May-11

Vishay Siliconix

SiR818DP

New Product

This document is subject to change without notice.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

T

-0.8

-0.6

-0.4

-0.2

0.2

0.4

- 50

- 25

0

255075

100

125

150

T

I

I

0

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.002

0.004

0.006

0.008

0.010

02468

10

V

T

T

I

0

40

80

120

160

200

0.001

0.01

0.1

1

10

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

V

* V

100 ms

Limited by R

1 ms

I

T

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

DC

I

0.01

0.1

1

10

100