SSG4512CE datasheet(1/7 Pages) SECOS

部件名	SSG4512CE

功能描述	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m

PDF	7 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 7 page

SSG4512CE

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 6.9 A, 30 V, RDS(ON) 31 mΩ

Ω

P-Ch: -5.2 A, -30 V, RDS(ON) 52 mΩ

Ω

Elektronische Bauelemente

26-Dec-2011 Rev. A

Page 1 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low RDS(on)

and to ensure minimal power loss and heat dissipation.

FEATURES

Low RDS(on) provides higher efficiency and

extends battery life.

Low thermal impedance copper leadframe

SOP-8 saves board space.

Fast Switch Speed.

High performance trench technology.

APPLICATION

DC-DC converters and power management in portable

and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

N-Ch

P-Ch

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

1

TA=25°C

ID

6.9

-5.2

A

TA=70°C

5.4

-6.8

A

Pulsed Drain Current

2

IDM

20

-20

A

Continuous Source Current (Diode Conduction)

1

IS

1.3

-1.3

A

Total Power Dissipation

1

TA=25°C

PD

2.1

W

TA=70°C

1.3

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Ratings

Maximum Junction-ambient

1

t<=5 sec

RθJA

60

°C / W

Maximum Junction-Case

1

t<=5 sec

RθJC

40

°C / W

Notes：

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature

SOP-8

A

H

B

M

D

C

J

K

F

L

E

N

G

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

S1

G1

S2

D1

D2

G2

类似零件编号 - SSG4512CE

制造商	部件名	数据表	功能描述
SHENZHEN DOINGTER SEMIC...	SSG4512CE	2Mb / 8P	P-Chanel and N-Channel MOSFET use advanced trench technology
VBsemi Electronics Co.,...	SSG4512CE	2Mb / 14P	N- and P-Channel 30 V (D-S) MOSFET
SeCoS Halbleitertechnol...	SSG4512CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET

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More results

SSG4512CE 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSG4512CE 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

类似零件编号 - SSG4512CE

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SSG4512CE 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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类似零件编号 - SSG4512CE

类似说明 - SSG4512CE

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